1 rectifier device data
. . . employing the schottky barrier principle in a large area metaltosilicon power diode. stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity protection diodes. ? low reverse current ? low stored charge, majority carrier conduction ? low power loss/high efficiency ? highly stable oxide passivated junction mechanical characteristics: ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 220 c max. for 10 seconds, 1/16 from case ? shipped in plastic bags, 1000 per bag ? available tape and reeled, 5000 per reel, by adding a arl'' suffix to the part number ? polarity: cathode indicated by polarity band ? marking: b150, b160 maximum ratings rating symbol mbr150 MBR160 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 60 volts rms reverse voltage v r(rms) 35 42 volts average rectified forward current (2) (v r(equiv) 0.2 v r (dc), t l = 90 c, r q ja = 80 c/w, p.c. board mounting, see note 3, t a = 55 c) i o 1 amp nonrepetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz, t l = 70 c) i fsm 25 (for one cycle) amps operating and storage junction temperature range (reverse voltage applied) t j , t stg 65 to +150 c peak operating junction temperature (forward current applied) t j(pk) 150 c thermal characteristics (notes 3 and 4) characteristic symbol max unit thermal resistance, junction to ambient r q ja 80 c/w electrical characteristics (t l = 25 c unless otherwise noted) (2) characteristic symbol max unit maximum instantaneous forward voltage (1) (i f = 0.1 a) (i f = 1 a) (i f = 3 a) v f 0.550 0.750 1.000 volt maximum instantaneous reverse current @ rated dc voltage (1) (t l = 25 c) (t l = 100 c) i r 0.5 5 ma (1) pulse test: pulse width = 300 m s, duty cycle 2.0%. (2) lead temperature reference is cathode lead 1/32 from case. preferred devices are motorola recommended choices for future use and best overall value. ? motorola, inc. 1996 order this document by mbr150/d
semiconductor technical data schottky barrier rectifiers 1 ampere 50, 60 volts case 5904 plastic MBR160 is a motorola preferred device rev 1
2 rectifier device data figure 1. typical forward voltage figure 2. typical reverse current* figure 3. forward power dissipation 1.4 v f , instantaneous voltage (volts) 10 1.0 v r , reverse voltage (volts) 40 70 0 0.1 0.05 0.001 i f(av) , average forward current (amps) 1.0 0 4.0 2.0 0 2.0 i f , instantaneous forward current (amps) i p f(av) , average forward 0.1 0.6 0.2 0.4 0.8 1.0 50 60 10 20 30 10 3.0 4.0 5.0 0 1.6 5.0 3.0 1.0 , reverse current (ma) r 0.2 0.5 1.0 0.02 0.01 0.005 0.002 t j = 150 c 100 c 25 c i pk /i av = 20 square wave dc 10 5 t j = 150 c *the curves shown are typical for the highest voltage device in the volt- age grouping. typical reverse current for lower voltage selections can be estimated from these same curves if v r is sufficiently below rated v r . 125 c 5.0 2.0 100 c 75 c 25 c power dissipation (watts) 1.2 0.07 0.05 0.03 0.02 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 thermal characteristics figure 4. thermal response r(t), transient thermal resistance (normalized) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 0.07 0.05 0.03 0.02 0.01 0.1 t, time (ms) 0.7 0.5 0.3 0.2 1.0 z q jl(t) = z q jl ? r(t) p pk p pk t p t 1 time duty cycle, d = t p /t 1 peak power, p pk , is peak of an equivalent square power pulse. d t jl = p pk ? r q jl [d + (1 d) ? r(t 1 + t p ) + r(t p ) r(t 1 )] where d t jl = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from figure 4, i.e.: r(t) = r(t 1 + t p ) = normalized value of transient thermal resistance at time, t 1 + t p .
3 rectifier device data figure 5. steadystate thermal resistance figure 6. typical capacitance 3/4 0 l, lead length (inches) 90 80 60 70 50 v r , reverse voltage (volts) 50 80 0 60 40 30 20 r jl , thermal resistance, 40 30 20 3/8 1/8 1/4 1/2 5/8 7/8 1.0 60 70 10 20 30 40 50 70 80 10 100 200 c, capacitance (pf) junctiontolead ( c/w) both leads to heat sink, equal length maximum typical 100 90 t j = 25 c f = 1 mhz note 3 e mounting data: data shown for thermal resistance junctiontoambient (r q ja) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. typical values for r q ja in still air mounting lead length, l (in) r q ja g method 1/8 1/4 1/2 3/4 r q ja 1 52 65 72 85 c/w 2 67 80 87 100 c/w 3 e 50 c/w note 4 e thermal circuit model: (for heat conduction through the leads) t a(a) t a(k) t l(a) t c(a) t j t c(k) t l(k) p d r q s(a) r q l(a) r q j(a) r q j(k) r q l(k) r q s(k) use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. for a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. terms in the model signify: t a = ambient temperature t c = case temperature t l = lead temperature t j = junction temperature r q s = thermal resistance, heat sink to ambient r q l = thermal resistance, lead to heat sink r q j = thermal resistance, junction to case p d = power dissipation mounting method 1 p.c. board with 11/2 x 11/2 copper surface. mounting method 3 p.c. board with 11/2 x 11/2 copper surface. board ground plane vector pin mounting mounting method 2 ll ll l = 3/8 (subscripts a and k refer to anode and cathode sides, respectively.) values for thermal resistance components are: r q l = 100 c/w/in typically and 120 c/w/in maximum. r q j = 36 c/w typically and 46 c/w maximum. note 5 e high frequency operation: since current flow in a schottky rectifier is the result of ma- jority carrier conduction, it is not subject to junction diode for- ward and reverse recovery transients due to minority carrier injection and stored charge. satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (see figure 6.) rectification efficiency measurements show that operation will be satisfactory up to several megahertz. for example, relative waveform rectification efficiency is approximately 70 percent at 2 mhz, e.g., the ratio of dc power to rms power in the load is 0.28 at this frequency, whereas perfect rectifica- tion would yield 0.406 for sine wave inputs. however, in con- trast to ordinary junction diodes, the loss in waveform effi- ciency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.
4 rectifier device data package dimensions case 5904 issue m k a d k b dim min max min max inches millimeters a 5.97 6.60 0.235 0.260 b 2.79 3.05 0.110 0.120 d 0.76 0.86 0.030 0.034 k 27.94 1.100 notes: 1. all rules and notes associated with jedec do41 outline shall apply. 2. polarity denoted by cathode band. 3. lead diameter not controlled within f dimension. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 4321, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 nishigotanda, shinagawaku, tokyo 141, japan. 81354878488 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 internet : http://motorola.com/sps mbr150/d ? codeline to be placed here
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